An unexpected factor in testing for CMOS opens: the die surface
نویسندگان
چکیده
abstract In this paper, we for the rst time present experimental evidence that the die surface can act as an RC interconnect, becoming an important factor in determining the voltage of a oating wire created by a CMOS open. We present a circuit model for this eeect veriied with HSPICE simulations. A detailed analysis of potential mechanisms behind this phenomenon is provided. We also present our measurement results for the trapped charge deposited on oating gates during fabrication.
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تاریخ انتشار 1996